The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
May. 12, 2006
Yumi Hayashi, Ayase, JP;
Hayato Nasu, Soka, JP;
Kazumichi Tsumura, Kawasaki, JP;
Takamasa Usui, Tokyo, JP;
Hiroyoshi Tanimoto, Yokohama, JP;
Yumi Hayashi, Ayase, JP;
Hayato Nasu, Soka, JP;
Kazumichi Tsumura, Kawasaki, JP;
Takamasa Usui, Tokyo, JP;
Hiroyoshi Tanimoto, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A transistor formed on a semiconductor substrate has a gate electrode formed via a gate insulating film and first and second diffusion layers formed in the semiconductor substrate, the first and second diffusion layers being positioned at both sides of the gate electrode. A first electrode is connected to the first diffusion layer of the transistor. A capacitor insulating film formed on the first electrode is formed of a silicon oxide film containing a substrate which is faster than Cu in diffusion velocity and which more readily reacts with oxygen than Cu does. A second electrode formed on the capacitor insulating film is formed of one of a Cu layer and another Cu layer containing the substance.