The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
Nov. 28, 2006
Takeo Kubota, Ibaraki-ken, JP;
Atsushi Shigeta, Kanagawa-ken, JP;
Kaori Yomogihara, Hyogo-ken, JP;
Makoto Honda, Kanagawa-ken, JP;
Hirokazu Ezawa, Tokyo, JP;
Takeo Kubota, Ibaraki-ken, JP;
Atsushi Shigeta, Kanagawa-ken, JP;
Kaori Yomogihara, Hyogo-ken, JP;
Makoto Honda, Kanagawa-ken, JP;
Hirokazu Ezawa, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A peripheral processing method includes: by at least one of locally heating the periphery of a workpiece including a silicon-based substrate and selectively supplying reacting activation species to the periphery, allowing oxidation rate on the periphery to be higher than oxidation rate of native oxide film on a surface of the silicon-based substrate, thereby forming a first oxide film along the periphery, the first oxide film being thicker than the native oxide film. A method of manufacturing a semiconductor device includes: forming an insulating film on a frontside and periphery of a silicon-based substrate; forming a workpiece by selectively etching away the insulating film to expose a portion of the frontside of the silicon-based substrate; forming a first oxide film at an exposed part of the silicon-based substrate, the exposed part being formed in the insulating film of the periphery during the selective etching; depositing a metal film on the frontside of the workpiece after the first oxide film is formed; and allowing the metal film to react with the portion of the frontside of the silicon-based substrate by heat treatment.