The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2009
Filed:
Oct. 14, 2008
Applicants:
Tadaaki Kaneko, Sanda, JP;
Yasushi Asaoka, Sanda, JP;
Naokatsu Sano, Sanda, JP;
Inventors:
Assignee:
Kwansei Gakuin Educational Foundation, Hyogo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 19/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Single crystal SiC, having no fine grain boundaries, a micropipe defect density of 1/cmor less and a crystal terrace of 10 micrometer or more is obtained by a high-temperature liquid phase growth method using a very thin Si melt layer. The method does not require temperature difference control between the growing crystal surface and a raw material supply polycrystal and preparation of a doped single crystal SiC is possible.
Kaneko, Tadaaki. (2009). Method for producing single crystal silicon carbide (U.S. Patent No. 7637998). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7637998
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile