The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 2009
Filed:
Sep. 13, 2006
Ryo Fujita, Hitachi, JP;
Haruo Yoda, Hinode, JP;
Kimiaki Ando, Hamura, JP;
Yuji Inoue, Hitachinaka, JP;
Masato Muraki, Inagi, JP;
Ryo Fujita, Hitachi, JP;
Haruo Yoda, Hinode, JP;
Kimiaki Ando, Hamura, JP;
Yuji Inoue, Hitachinaka, JP;
Masato Muraki, Inagi, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Canon Inc., Tokyo, JP;
Abstract
High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.