The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2009
Filed:
Mar. 09, 2007
Sven Beyer, Dresden, DE;
Thorsten Kammler, Ottendorf-Okrilla, DE;
Rolf Stephan, Dresden, DE;
Manfred Horstmann, Duehrrroersdorf-Dittersbach, DE;
Sven Beyer, Dresden, DE;
Thorsten Kammler, Ottendorf-Okrilla, DE;
Rolf Stephan, Dresden, DE;
Manfred Horstmann, Duehrrroersdorf-Dittersbach, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A method of forming a field effect transistor comprises providing a semiconductor substrate, a gate electrode being formed over the semiconductor substrate. At least one cavity is formed adjacent the gate electrode. A strain-creating element is formed in the at least one cavity. The strain-creating element comprises a compound material comprising a first chemical element and a second chemical element. A first concentration ratio between a concentration of the first chemical element in a first portion of the strain-creating element and a concentration of the second chemical element in the first portion of the strain-creating element is different from a second concentration ratio between a concentration of the first chemical element in a second portion of the strain-creating element and a concentration of the second chemical element in the second strain-creating element.