The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Feb. 24, 2009
Horng-huei Tseng, Hsin-Chu, TW;
Jhy-chyum Guo, Hsinchu, TW;
Chenming HU, Hsin-Chu, TW;
Da-chi Lin, Hsin-Chu, TW;
Horng-Huei Tseng, Hsin-Chu, TW;
Jhy-Chyum Guo, Hsinchu, TW;
Chenming Hu, Hsin-Chu, TW;
Da-Chi Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
Provided is a method that includes forming a first semiconductor layer on a semiconductor substrate, growing a second semiconductor layer on the first semiconductor layer, forming composite shapes on the first semiconductor layer, each composite shape comprising of an overlying oxide-resistant shape and an underlying second semiconductor shape, with portions of the first semiconductor layer exposed between the composite shapes, forming spacers on sides of the composite shapes, forming buried silicon oxide regions in exposed top portions of the first semiconductor layer, and in portions of the first semiconductor layer located underlying second semiconductor shapes, selectively removing the oxide-resistant shapes and spacers resulting in the second semiconductor shapes, and forming a semiconductor device in a second semiconductor shape wherein a first portion of the semiconductor device overlays the first semiconductor layer and wherein second portions of the semiconductor device overlays a buried silicon oxide region.