The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2009

Filed:

Dec. 19, 2006
Applicants:

Yasri Yudhistira, Singapore, SG;

Johnny Widodo, Singapore, SG;

Bei Chao Zhang, Singapore, SG;

Liang-choo Hsia, Singapore, SG;

Inventors:

Yasri Yudhistira, Singapore, SG;

Johnny Widodo, Singapore, SG;

Bei Chao Zhang, Singapore, SG;

Liang-Choo Hsia, Singapore, SG;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor processing system with ultra low-K dielectric is provided including providing a substrate having an electronic circuit, forming an ultra low-K dielectric layer, having porogens, over the substrate, blocking an incoming radiation from a first region of the ultra low-K dielectric layer, evaporating the porogens from a second region of the ultra low-K dielectric layer by projecting the incoming radiation on the second region, and removing the ultra low-K dielectric layer in the first region with a developer.


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