The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2009
Filed:
Sep. 05, 2006
Kazuki Narishige, Nirasaki, JP;
Kazuki Narishige, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A semiconductor device manufacturing method includes a plasma etching process for selectively plasma etching a silicon nitride film against a silicon oxide film formed under the silicon nitride film in a substrate to be processed. The plasma etching process uses an etching gas including a CFgas (m, n represent integers of 1 or greater) added to a gaseous mixture of a CHFgas (x, y represent integers of 1 or greater) and Ogas, wherein the flow rate of the CFgas is not greater than 10% of that of the Ogas. The etching gas may further include a rare gas.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile