The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2009
Filed:
Jan. 26, 2006
Mark D. Hall, Austin, TX (US);
Dharmesh Jawarani, Round Rock, TX (US);
Mehul D. Shroff, Austin, TX (US);
Edward O. Travis, Austin, TX (US);
Mark D. Hall, Austin, TX (US);
Dharmesh Jawarani, Round Rock, TX (US);
Mehul D. Shroff, Austin, TX (US);
Edward O. Travis, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A semiconductor process and apparatus provide a T-shaped structure () formed from a polysilicon structure () and an epitaxially grown polysilicon layer () and having a narrower bottom critical dimension (e.g., at or below 40 nm) and a larger top critical dimension (e.g., at or above 40 nm) so that a silicide may be formed from a first material (such as CoSi) in at least the upper region () of the T-shaped structure () without incurring the increased resistance caused by agglomeration and voiding that can occur with certain silicides at the smaller critical dimensions.