The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2009
Filed:
May. 15, 2001
Applicants:
William J. Schaff, Ithaca, NY (US);
Jeonghyun Hwang, Ithaca, NY (US);
Bruce M. Green, Gilbert, AZ (US);
Inventors:
William J. Schaff, Ithaca, NY (US);
Jeonghyun Hwang, Ithaca, NY (US);
Bruce M. Green, Gilbert, AZ (US);
Assignee:
Cornell Research Foundation, Inc., Ithaca, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A passivation layer of AlN is deposited on a GaN channel HFET using molecular beam epitaxy (MBE). Using MBE, many other surfaces may also be coated with AlN, including silicon devices, nitride devices, GaN based LEDs and lasers as well as other semiconductor systems. The deposition is performed at approximately 150° C. and uses alternating beams of aluminum and remote plasma RF nitrogen to produce an approximately 500 Å thick AlN layer.