The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2009
Filed:
Mar. 30, 2006
Applicants:
Kevin Lally, Austin, TX (US);
Merritt Funk, Austin, TX (US);
Radha Sundararajan, Dripping Springs, TX (US);
Inventors:
Kevin Lally, Austin, TX (US);
Merritt Funk, Austin, TX (US);
Radha Sundararajan, Dripping Springs, TX (US);
Assignee:
Tokyo Electron Limited, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology includes directing an incident beam on the damaged structure. A diffracted beam is received from the damaged structure. The received diffracted beam is processed to determine a profile of an undamaged portion of the damaged structure and to measure an amount of dielectric damage of the damaged structure.