The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 17, 2009

Filed:

Sep. 27, 2006
Applicants:

Junichi Suzuki, Shizuoka, JP;

Keiko Emi, Ibaraki, JP;

Takayuki Abe, Kanagawa, JP;

Tomohiro Iijima, Shizuoka, JP;

Hideyuki Tsurumaki, Kanagawa, JP;

Inventors:

Junichi Suzuki, Shizuoka, JP;

Keiko Emi, Ibaraki, JP;

Takayuki Abe, Kanagawa, JP;

Tomohiro Iijima, Shizuoka, JP;

Hideyuki Tsurumaki, Kanagawa, JP;

Assignee:

NuFlare Technology, Inc., Numazu-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G21K 5/10 (2006.01); H01J 37/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A charged particle beam writing method includes inputting pattern data for writing a writing region, predicting a writing time for writing the pattern of the pattern data, acquiring, by using a correlation among a time required from a writing start time, the predicted writing time and a base dose of a charged particle beam, a base dose of the charged particle beam after an optional time from a writing start in the case in which the pattern are written, acquiring, by using a correlation among the time required from the writing start time, the predicted writing time and a proximity effect correction coefficient, a proximity effect correction coefficient after an optional time from the writing start in the case in which the pattern are written, calculating, by using the base dose and the proximity effect correction coefficient after the optional time, an exposure dose of the charged particle beam after an optional time from a writing start in the writing time, and writing an optional position in the writing region by using the charged particle beam corresponding to the dose.


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