The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Nov. 07, 2007
Tomio Iwasaki, Tokyo, JP;
Hiroshi Moriya, Tokyo, JP;
Hideo Miura, Tokyo, JP;
Shuji Ikeda, Tokyo, JP;
Tomio Iwasaki, Tokyo, JP;
Hiroshi Moriya, Tokyo, JP;
Hideo Miura, Tokyo, JP;
Shuji Ikeda, Tokyo, JP;
Renesas Technology Corporation, Tokyo, JP;
Abstract
Diffusion layers-are formed on a silicon substrate, and gate dielectric filmsand gate lectrodesare formed on these diffusion layers-so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films. Gate dielectric filmsare formed, for example, by CVD. As substrate, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrateor gate electrodes. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.