The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Aug. 17, 2007
Shigenobu Maeda, Tokyo, JP;
Takashi Ipposhi, Tokyo, JP;
Yuuichi Hirano, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
It is an object to obtain a semiconductor device including a capacitance having a great Q-value. In an SOI substrate comprising a support substrate (), a buried oxide film () and an SOI layer (), an isolating oxide film(to) is selectively formed in an upper layer portion of the SOI layer () with a part of the SOI layer () remaining as a Pwell region (). Consequently, an isolation (partial isolation) structure is obtained. An Ndiffusion region () is formed in the SOI layer () between the isolating oxide films () and () and a Pdiffusion region () is formed in the SOI layer () between the isolating oxide films () and (). Consequently, there is obtained a junction type variable capacitance (C) having a PN junction surface of the Pwell region () provided under the isolating oxide film () and the Ndiffusion region ().