The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2009
Filed:
Oct. 02, 2007
Yutaka Ohmoto, Hikari, JP;
Hironobu Kawahara, Kudamatsu, JP;
Ken Yoshioka, Hikari, JP;
Kazue Takahashi, Kudamatsu, JP;
Saburou Kanai, Hikari, JP;
Yutaka Ohmoto, Hikari, JP;
Hironobu Kawahara, Kudamatsu, JP;
Ken Yoshioka, Hikari, JP;
Kazue Takahashi, Kudamatsu, JP;
Saburou Kanai, Hikari, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A plasma processing apparatus includes a high-frequency power source for applying bias power to an electrode on which a substrate is disposed, an insulating layer formed on a surface of the electrode, a conductive material buried within the insulating layer, a feeder line connecting the high-frequency power source and the conductive material, a variable capacitor provided in the feeder line, and a direct current power source connected to the electrode at a position between the electrode and the high-frequency power source. One portion of the insulating layer where the conductive material is buried formed on an outer part of the electrode has a thickness which is greater than a thickness of another portion of the insulating layer where the conducting material is not buried and which extends from a central part of the electrode to the one portion of the insulating layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile