The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Feb. 26, 2007
Lian-hua Shih, Chiayi, TW;
Yi-ching Wu, Kao-Hsiung Hsien, TW;
Jiann-fu Chen, Hsin-Chu, TW;
Ming-te Chen, Tai-Chung Hsien, TW;
Chin-jen Cheng, Taipei, TW;
Lian-Hua Shih, Chiayi, TW;
Yi-Ching Wu, Kao-Hsiung Hsien, TW;
Jiann-Fu Chen, Hsin-Chu, TW;
Ming-Te Chen, Tai-Chung Hsien, TW;
Chin-Jen Cheng, Taipei, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A metal-insulator-metal (MIM) capacitor that includes a silicon nitride (SiN) dielectric film is disclosed. The MIM capacitor includes a bottom electrode, a top electrode and a dielectric layer positioned between the bottom electrode and the top electrode. The dielectric layer includes a silicon nitride film that has a plurality of silicon-hydrogen bonds and a plurality of nitride-hydrogen bonds. A ratio of silicon-hydrogen bonds to nitride-hydrogen bonds is equal to or smaller than 0.5. Accordingly, the nitrogen-rich and compressive silicon nitride film can improve the breakdown voltage of the MIM capacitor.