The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Sep. 20, 2002
Masaru Kurihara, Kawasaki, JP;
Naoyuki Kofuji, Tama, JP;
Naoshi Itabashi, Hachioji, JP;
Takashi Tsutsumi, Kawasaki, JP;
Masaru Kurihara, Kawasaki, JP;
Naoyuki Kofuji, Tama, JP;
Naoshi Itabashi, Hachioji, JP;
Takashi Tsutsumi, Kawasaki, JP;
Hitachi, Ltd., Tokyo, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
A plasma processing apparatus which stably and continuously generates a uniform plasma to process large-diameter wafers using a wide range of seed gases under wide-ranging pressure and density conditions and can be thus used for a wide range of applications, ensuring a high production efficiency. The plasma processing apparatus, which introduces electromagnetic waves through a dielectric window into a reduced pressure vessel, has at least two antenna elements which are rotationally symmetrical. One end of each antenna is grounded and power is fed from a high frequency power supply to the other end in the same or virtually same phase.