The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Aug. 24, 2005
Kazuhide Hasebe, Minami-Alps, JP;
Nobutake Nodera, Kai, JP;
Atsushi Endo, Kai, JP;
Makoto Umeki, Kai, JP;
Katsumi Nishimura, Kyoto, JP;
Masakazu Minami, Kyoto, JP;
Makoto Yoshida, Omihachiman, JP;
Kazuhide Hasebe, Minami-Alps, JP;
Nobutake Nodera, Kai, JP;
Atsushi Endo, Kai, JP;
Makoto Umeki, Kai, JP;
Katsumi Nishimura, Kyoto, JP;
Masakazu Minami, Kyoto, JP;
Makoto Yoshida, Omihachiman, JP;
Tokyo Electron Limited, Tokyo, JP;
HORIBA Ltd., Kyoto, JP;
Abstract
A film formation apparatus for a semiconductor process includes a cleaning gas supply circuit, a concentration measuring section, and an information processor. The cleaning gas supply circuit is configured to supply a cleaning gas into a reaction chamber to perform cleaning of removing from an inner surface of the reaction chamber a by-product film derived from a film formation gas. The concentration measuring section is disposed in an exhaust system to monitor concentration of a predetermined component contained in exhaust gas from the reaction chamber. The information processor is configured to compare a measurement value obtained by the concentration measuring section with a preset value and to thereby determine an end point of the cleaning.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile