The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2009

Filed:

Feb. 09, 2005
Applicants:

Yung-sung Yen, Taipei County, TW;

Kuei Shun Chen, Hsin-Chu, TW;

Chia-sui Hsu, Hsinchu, TW;

Yuh-sen Chang, Hsin-Chu, TW;

Hsiao-tzu LU, Hsinchu, TW;

Inventors:

Yung-Sung Yen, Taipei County, TW;

Kuei Shun Chen, Hsin-Chu, TW;

Chia-Sui Hsu, Hsinchu, TW;

Yuh-Sen Chang, Hsin-Chu, TW;

Hsiao-Tzu Lu, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for photolithography in semiconductor manufacturing includes providing a mask with first and second focus planes for a wafer. The wafer includes corresponding first and second wafer regions. The first wafer region receives a first image during a first exposure utilizing the first focus plane. The second wafer region receives a second image during a second exposure utilizing the second focus plane.


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