The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Oct. 25, 2006
Thomas W. Dyer, Pleasant Valley, NY (US);
Sunfei Fang, LaGrangeville, NY (US);
Ja-hum Ku, LaGrangeville, NY (US);
Yong Meng Lee, Singapore, SG;
Thomas W. Dyer, Pleasant Valley, NY (US);
Sunfei Fang, LaGrangeville, NY (US);
Ja-Hum Ku, LaGrangeville, NY (US);
Yong Meng Lee, Singapore, SG;
International Business Machines Corporation, Armonk, NY (US);
Samsung Electronic Co., Ltd (Corporation), Suwon-Si, Gyeonggi-Do, KR;
Chartered Semiconductor Manufacturing Ltd (Corporation), Singapore, SG;
Abstract
An integrated circuit device having an increased source/drain contact area by a formed silicided polysilicon spacer. The polysilicon sidewall spacer is formed having a height less than seventy percent of said gate conductor height, and having a continuous surface silicide layer over the deep source and drain regions. The contact area is enhanced by the silicided polysilicon spacer.