The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Mar. 18, 2004
Masato Nishikawa, Kakegawa, JP;
Kiyohisa Takahashi, Kakegawa, JP;
Masato Nishikawa, Kakegawa, JP;
Kiyohisa Takahashi, Kakegawa, JP;
AZ Electronic Materials USA Corp., Somerville, NJ (US);
Abstract
A modified polyvinyl alcohol (PVA) protected with a protecting group of the present invention is one wherein an amount of high-molecular weight body components of the modified polyvinyl alcohol having a weight-average molecular weight of 250,000 or more as determined by polyethylene glycol standards according to a gel permeation chromatography is 1000 ppm or less in the modified polyvinyl alcohol. The modified PVA is prepared by removing a metal ion and an acid from the modified PVA such as acetalized PVA with ion exchange treatment and then heat-treating at 80° C. or higher. An auxiliary for fine pattern formation of the present invention comprises the aforementioned modified PVA, a water-soluble crosslinking agent, and water or a mixed solvent of water and a water-soluble organic solvent. The auxiliary for fine pattern formation is applied over a resist patternand a coated layeris formed thereon. Then the resist patternand the coated layerare heated and thereby an acid is diffused from the resist patternto the coated layer. As a result, the coated layer in the vicinity of the resist pattern surface is crosslinked and cured by the diffused acid. The coated layer is developed to form a hole pattern having crosslinked and cured layer on the resist pattern, of which the hole size is less than a limit resolution of the wavelength of a light-exposure and which have no development defects.