The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Sep. 28, 2006
Applicants:
Chung-heng Yang, Hsinchu, TW;
Yi-ming Sheu, Hsin-Chu, TW;
Sheng-jier Yang, Zhubei, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming an integrated circuit includes providing a semiconductor substrate, forming a re-implantation blocking layer over the semiconductor substrate, forming a mask over the re-implantation blocking layer, patterning the mask to form an opening, wherein a portion of the re-implantation blocking layer is exposed through the opening, performing an implantation to introduce an impurity into a portion of the semiconductor substrate underlying the opening to form a well region, removing the mask, and removing the re-implantation blocking layer.