The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Sep. 03, 2004
Applicants:
Jeremy Chang, Sunnyvale, CA (US);
Andreas Fischer, Castro Valley, CA (US);
Peter Loewenhardt, Pleasanton, CA (US);
Inventors:
Jeremy Chang, Sunnyvale, CA (US);
Andreas Fischer, Castro Valley, CA (US);
Peter Loewenhardt, Pleasanton, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a semiconductor device is provided. A wafer with a dielectric layer disposed under a photoresist mask is placed in an etch chamber. The dielectric layer is etched. The wafer is raised. A cleaning gas is provided. A plasma is formed from the cleaning gas. A polymer that has formed on the bevel of the wafer is removed using the plasma from the cleaning gas. The wafer is removed from the etch chamber.