The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2009
Filed:
May. 25, 2007
Omer H. Dokumaci, Hartsdale, NY (US);
John M. Hergenrother, Ridgefield, NY (US);
Shreesh Narasimha, Beacon, NY (US);
Jeffrey W. Sleight, Ridgefield, CT (US);
Omer H. Dokumaci, Hartsdale, NY (US);
John M. Hergenrother, Ridgefield, NY (US);
Shreesh Narasimha, Beacon, NY (US);
Jeffrey W. Sleight, Ridgefield, CT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Superior control of short-channel effects for an ultra-thin semiconductor-on-insulator field effect transistor (UTSOI-FET) is obtained by performing a halo implantation immediately after a gate reoxidation step. An offset is then formed and thereafter an extension implantation process is performed. This sequence of processing steps ensures that the halo implant is laterally separated from the extension implant by the width of the offset spacer. This construction produces equivalent or far superior short channel performance compared to conventional UTSOI-FETs. Additionally, the above processing steps permit the use of lower halo doses as compared to conventional processes.