The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2009

Filed:

Apr. 27, 2007
Applicants:

Xiaoyu Chen, Singapore, SG;

Donghua Liu, Singapore, SG;

Sung Mun Jung, Singapore, SG;

Swee Tuck Woo, Singapore, SG;

Rachel Low, Singapore, SG;

Louis Lim, Singapore, SG;

Siow Lee Chwa, Singapore, SG;

Inventors:

Xiaoyu Chen, Singapore, SG;

Donghua Liu, Singapore, SG;

Sung Mun Jung, Singapore, SG;

Swee Tuck Woo, Singapore, SG;

Rachel Low, Singapore, SG;

Louis Lim, Singapore, SG;

Siow Lee Chwa, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile memory cell includes an access and a storage transistor coupled in series. The memory cell is formed on a thin gate well tailored for transistors with thin gate dielectrics. The access transistor is a hybrid transistor which includes a gate with a thick gate dielectric layer formed on the thin gate well.


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