The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
Mar. 27, 2003
Takehiro Ueda, Yamanashi-ken, JP;
Katsuyuki Koizumi, Yamanashi-ken, JP;
Kouki Suzuki, Yamanashi-ken, JP;
Takehiro Ueda, Yamanashi-ken, JP;
Katsuyuki Koizumi, Yamanashi-ken, JP;
Kouki Suzuki, Yamanashi-ken, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
When the state of the vacuum processing chamber is switched to an idle state in which an insulating fluid is circulated while a semiconductor wafer W is not placed in the vacuum processing chamber and no plasma is generated in the vacuum processing chamber, nitrogen gas purging (Npurging) of the inside of the vacuum processing chamber is started, and the pressure in the vacuum processing chamber is controlled to a predetermined level, for example, about 27 Pa (200 mTorr). This makes it possible to prevent a component in the vacuum processing chamber of a plasma processor from being charged to high voltage, so that an insulative material can be protected against breakdown caused by electric discharge or the like.