The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2009

Filed:

Aug. 07, 2002
Applicants:

Kazuya Okubo, Tokyo, JP;

Mitsuhiro Tachibana, Yamanashi, JP;

Cheng Fang, Yamanashi, JP;

Kohichi Sato, Yamanashi, JP;

Hotaka Ishizuka, Yamanashi, JP;

Inventors:

Kazuya Okubo, Tokyo, JP;

Mitsuhiro Tachibana, Yamanashi, JP;

Cheng Fang, Yamanashi, JP;

Kohichi Sato, Yamanashi, JP;

Hotaka Ishizuka, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a tungsten film on a surface of an object to be processed in a vessel capable of being vacuumized, includes the steps of forming a tungsten film by alternately repeating a reduction gas supplying process for supplying a reduction gas and a tungsten gas supplying process for supplying a tungsten-containing gas with an intervening purge process therebetween for supplying an inert gas while vacuumizing the vessel. A reduction gas supplying period of a reduction gas supplying process among the repeated reduction gas supplying processes is set to be longer than that of the remaining reduction gas supplying processes.


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