The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2009
Filed:
Oct. 05, 2005
Jiunn-ren Hwang, Hsin-Chu, TW;
Min-hwa Chi, Taipei, TW;
Fu-liang Yang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-chu, TW;
Abstract
A 2-bit FinFET flash memory cell capable of storing 2 bits and a method of forming the same are provided. The memory cell includes a semiconductor fin on a top surface of a substrate, a gate insulation film on the top surface and sidewalls of a channel section of the semiconductor fin, a gate electrode on the gate insulation film, and two charge-trapping regions along opposite sides of the gate electrode, wherein each charge-trapping region is separated from the gate electrode and the semiconductor fin by a tunneling layer. The memory cell further includes a protective layer on the charge-trapping regions. Each of the two charge-trapping regions is capable of storing one bit. The memory cell can be operated by applying different bias voltages to the source, the drain, and the gate of the memory cell.