The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2009
Filed:
Dec. 01, 2006
Suhail Anwar, San Jose, CA (US);
Chung-hee Park, Seoul, KR;
Beom Soo Park, San Jose, CA (US);
Han Byoul Kim, Chon An, KR;
Soo Young Choi, Fremont, CA (US);
John M. White, Hayward, CA (US);
Suhail Anwar, San Jose, CA (US);
Chung-Hee Park, Seoul, KR;
Beom Soo Park, San Jose, CA (US);
Han Byoul Kim, Chon An, KR;
Soo Young Choi, Fremont, CA (US);
John M. White, Hayward, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of PECVD deposition of silicon-containing films has been discovered and further developed. The method is particularly useful when the films are deposited on substrates having surface areas which are larger than 25,000 cm. The method prevents the deposition of partially reacted silicon-containing species which form a powdery material or haze (contaminant compound) on the substrate surface. The contaminant compounds are avoided by assuring that the power applied to form a plasma in the PECVD process is maintained, at least at a minimal level, until reactive silicon-containing precursor gases present above the surface of the substrate have been reacted or evacuated from the plasma processing area.