The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2009
Filed:
May. 09, 2006
Applicants:
Neng-kuo Chen, Hsin-Chu, TW;
Teng-chun Tsai, Hsin-Chu, TW;
Hsiu-lien Liao, Tai-Chung, TW;
Inventors:
Assignee:
United Microelectronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a gate and a method for etching a conductive layer are provided. First, a substrate is provided, including a dielectric layer and a conductive layer on its surface in order. Subsequently, a patterned silicon nitride layer is formed on the conductive layer as a hard mask, and the hydrogen concentration of the patterned silicon nitride layer is more than 10atoms/cm. Thereafter, the conductive layer and the dielectric layer are etched utilizing the hard mask as a mask. Finally, an etching solution is utilized to remove the hard mask.