The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
May. 05, 2006
David Bour, Cupertino, CA (US);
Jacob W. Smith, Santa Clara, CA (US);
Sandeep Nijhawan, Los Altos, CA (US);
Lori D. Washington, Union City, CA (US);
David Eaglesham, Livermore, CA (US);
David Bour, Cupertino, CA (US);
Jacob W. Smith, Santa Clara, CA (US);
Sandeep Nijhawan, Los Altos, CA (US);
Lori D. Washington, Union City, CA (US);
David Eaglesham, Livermore, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of suppressing parasitic particle formation in a metal organic chemical vapor deposition process is described. The method may include providing a substrate to a reaction chamber, and introducing an organometallic precursor, a particle suppression compound and at least a second precursor to the reaction chamber. The second precursor reacts with the organometallic precursor to form a nucleation layer on the substrate. Also, a method of suppressing parasitic particle formation during formation of a III-V nitride layer is described. The method includes introducing a group III metal containing precursor to a reaction chamber. The group III metal precursor may include a halogen. A hydrogen halide gas and a nitrogen containing gas are also introduced to the reaction chamber. The nitrogen containing gas reacts with the group III metal precursor to form the III-V nitride layer on the substrate.