The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2009

Filed:

Aug. 09, 2005
Applicants:

Kaushik Chanda, Fishkill, NY (US);

Lawrence A. Clevenger, LaGrangeville, NY (US);

Andrew P. Cowley, Wappingers Falls, NY (US);

Jason P. Gill, Essex, VT (US);

Baozhen LI, South Burlington, VT (US);

Chih-chao Yang, Poughkeepsie, NY (US);

Inventors:

Kaushik Chanda, Fishkill, NY (US);

Lawrence A. Clevenger, LaGrangeville, NY (US);

Andrew P. Cowley, Wappingers Falls, NY (US);

Jason P. Gill, Essex, VT (US);

Baozhen Li, South Burlington, VT (US);

Chih-Chao Yang, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a device includes depositing a electromigration (EM) resistive material in an etched trench formed in a substrate and a wiring layer. The EM resistive material is formed in electrical contact with an underlying diffusion barrier layer and wiring layer. The method further includes forming a via structure in electrical contact with the EM resistive material and the wiring layer. The method results in a structure which prevents an open circuit.


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