The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
Jul. 28, 2008
Sadayuki Ohnishi, Kawasaki, JP;
Kouichi Owto, Kawasaki, JP;
Tatsuya Usami, Kawasaki, JP;
Noboru Morita, Kawasaki, JP;
Kouji Arita, Kawasaki, JP;
Ryouhei Kitao, Kawasaki, JP;
Youichi Sasaki, Kawasaki, JP;
Sadayuki Ohnishi, Kawasaki, JP;
Kouichi Owto, Kawasaki, JP;
Tatsuya Usami, Kawasaki, JP;
Noboru Morita, Kawasaki, JP;
Kouji Arita, Kawasaki, JP;
Ryouhei Kitao, Kawasaki, JP;
Youichi Sasaki, Kawasaki, JP;
NEC Electronics Corporation, Kawasaki, JP;
Abstract
A semiconductor device includes an interlayer insulating film formed on or over a semiconductor substrate. An opening is formed in the interlayer insulating film and reaches a lower layer metal wiring conductor. A metal plug is formed by filling the opening with Cu containing metal via a barrier metal. The interlayer insulating film includes the insulating film which includes a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond in the carbon containing silicon oxide film. The proportion of Si—CH2 bond (1360 cm-1) to Si—CH3 bond (1270 cm-1) in the insulating film is in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum.