The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
May. 10, 2007
Robert Daniel Clark, Schenectady, NY (US);
Hareesh Thridandam, Vista, CA (US);
Kirk Scott Cuthill, Vista, CA (US);
Arthur Kenneth Hochberg, Solana Beach, CA (US);
Robert Daniel Clark, Schenectady, NY (US);
Hareesh Thridandam, Vista, CA (US);
Kirk Scott Cuthill, Vista, CA (US);
Arthur Kenneth Hochberg, Solana Beach, CA (US);
Air Products and Chemicals, Inc., Allentown, PA (US);
Abstract
A method for forming a metal silicate as a high k dielectric in an electronic device, comprising the steps of: providing diethylsilane to a reaction zone; concurrently providing a source of oxygen to the reaction zone; concurrently providing a metal precursor to the reaction zone; reacting the diethylsilane, source of oxygen and metal precursor by chemical vapor deposition to form a metal silicate on a substrate comprising the electronic device. The metal is preferably hafnium, zirconium or mixtures thereof. The dielectric constant of the metal silicate film can be tuned based upon the relative atomic concentration of metal, silicon, and oxygen in the film.