The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2009
Filed:
Oct. 25, 2006
Osamu Ikeda, Yokohama, JP;
Masahide Okamoto, Yokohama, JP;
Hidemasa Kagii, Takasaki, JP;
Hiroi Oka, Tamamura, JP;
Hiroyuki Nakamura, Takasaki, JP;
Osamu Ikeda, Yokohama, JP;
Masahide Okamoto, Yokohama, JP;
Hidemasa Kagii, Takasaki, JP;
Hiroi Oka, Tamamura, JP;
Hiroyuki Nakamura, Takasaki, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
In a power semiconductor device, a joint between the power semiconductor element and frame plated with Ni is composed of a laminated structure comprising, from the power semiconductor element side, an intermetallic compound layer having a melting point of 260° C. or higher, a Cu layer, a metal layer having a melting point of 260° C. or higher, a Cu layer and an intermetallic layer having a melting point of 260° C. or higher. The structure of the joint buffers the stress generated by the secondary mounting and temperature cycle at the bond for the semiconductor element and the frame having a large difference in thermal expansion coefficient from each other.