The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2009
Filed:
Sep. 29, 2006
Applicants:
Anthony Renau, W. Newbury, MA (US);
James S. Buff, Brookline, NH (US);
Svetlana B. Radovanov, Marblehead, MA (US);
Inventors:
Anthony Renau, W. Newbury, MA (US);
James S. Buff, Brookline, NH (US);
Svetlana B. Radovanov, Marblehead, MA (US);
Assignee:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/141 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
Abstract
Multi-purpose electrostatic lens for an ion implanter. The electrostatic lens allows an ion implanter to scan, accelerate, decelerate, expand, compress, focus and parallelize an ion beam. This capability enables the ion implanter to function as either a high precision medium-current ion implanter or as a high-current ion implanter.