The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2009

Filed:

Jul. 10, 2006
Applicants:

Paul Zimmerman, Leefdaal, BE;

Matty Caymax, Leuven, BE;

Stefan DE Gendt, Wijnegem, BE;

Annelies Delabie, Bierbeek, BE;

Lars-ake Ragnarsson, Leuven, BE;

Inventors:

Paul Zimmerman, Leefdaal, BE;

Matty Caymax, Leuven, BE;

Stefan De Gendt, Wijnegem, BE;

Annelies Delabie, Bierbeek, BE;

Lars-Ake Ragnarsson, Leuven, BE;

Assignee:

IMEC, Kapeldreef, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention is related to an ALD method for depositing a layer including the steps of a) providing a semiconductor substrate in a reactor; b) providing a pulse of a first precursor gas into the reactor; c) providing a pulse of a second precursor gas into the reactor; d) providing an inert atmosphere in the reactor; and e) repeating step b) through step d), wherein at least once during step d) the semiconductor substrate is exposed to UV irradiation.

Published as:
EP1743954A1; JP2007027723A; US2007049045A1; US7579285B2; EP1743954B1; ATE467700T1; DE602006014233D1;

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