The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2009
Filed:
Feb. 13, 2006
Yu-lien Huang, Jhubei, TW;
Jim Huang, Hsinchu, TW;
Ling-yen Yeh, Hsinchu, TW;
Hun-jan Tao, Hsin-Chu, TW;
Yu-Lien Huang, Jhubei, TW;
Jim Huang, Hsinchu, TW;
Ling-Yen Yeh, Hsinchu, TW;
Hun-Jan Tao, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for improving uniformity of stressors of MOS devices is provided. The method includes forming a gate dielectric over a semiconductor substrate, forming a gate electrode on the gate dielectric, forming a spacer on respective sidewalls of the gate electrode and the gate dielectric, forming a recess in the semiconductor adjacent the spacer, and depositing SiGe in the recess to form a SiGe stressor. The method further includes etching the SiGe stressor to improve the uniformity of SiGe stressors.