The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Jan. 30, 2007
Ji-young Lee, Yongin-si, KR;
Hak-sun Lee, Suwon-si, KR;
Myeong-cheol Kim, Suwon-si, KR;
Kyung-yub Jeon, Yongin-si, KR;
Ji-young Lee, Yongin-si, KR;
Hak-sun Lee, Suwon-si, KR;
Myeong-cheol Kim, Suwon-si, KR;
Kyung-yub Jeon, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of forming a first hard mask pattern including a plurality of first line patterns formed on the etch target layer in a first direction and having a first pitch. A third layer is formed on sidewalls and an upper surface of the first hard mask pattern, such that the third layer includes a top surface having a recess formed between two adjacent first line patterns. A second hard mask pattern including a plurality of second line patterns each extending in the first direction within the recess is formed. Then, the third layer is anisotropically etched to selectively expose an etch target layer between the first line patterns and the second line patterns. Then, the etch target layer is anisotropically etched using the first hard mask pattern and the second hard mask pattern as an etch mask.