The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Aug. 01, 2007
Konstantin Bourdelle, Crolle, FR;
Carlos Mazure, Bernin, FR;
Pierre Rayssac, Legal Representative, Clairvaux d' Aveyron, FR;
Gisèle Rayssac, Legal Representative, Clairvaux d' Aveyron, FR;
Konstantin Bourdelle, Crolle, FR;
Carlos Mazure, Bernin, FR;
Pierre Rayssac, legal representative, Clairvaux d' Aveyron, FR;
Gisèle Rayssac, legal representative, Clairvaux d' Aveyron, FR;
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
A method of fabricating a hybrid substrate by direct bonding of donor and receiver substrates where each substrate has a respective front face and surface, with the front face of the receiver substrate having a semiconductor material near the surface, and the donor substrate including a zone of weakness that defines a layer to be transferred. The method includes preparing the substrate surfaces by exposing the surface of the receiver substrate to a temperature from about 900° C. to about 1200° C. in an inert atmosphere for at least 30 sec; directly bonding together the front faces of the prepared substrates to form a composite substrate; heat treating the composite substrate to increase bonding strength between the front surfaces of the donor and receiver substrates; and transferring the layer from the donor substrate by detaching the remainder of the donor substrate at the zone of weakness.