The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Apr. 14, 2006
David Bour, Cupertino, CA (US);
Sandeep Nijhawan, Los Altos, CA (US);
Lori Washington, Union City, CA (US);
Jacob Smith, Santa Clara, CA (US);
David Eaglesham, Livermore, CA (US);
David Bour, Cupertino, CA (US);
Sandeep Nijhawan, Los Altos, CA (US);
Lori Washington, Union City, CA (US);
Jacob Smith, Santa Clara, CA (US);
David Eaglesham, Livermore, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods are provided of fabricating compound nitride semiconductor structures. A group-III precursor and a nitrogen precursor are flowed into a processing chamber to deposit a first layer over a surface of a first substrate with a thermal chemical-vapor-deposition process. A second layer is deposited over a surface of a second substrate with the thermal chemical-vapor-deposition process using the first group-III precursor and the first nitrogen precursor. The first and second substrates are different outer substrates of a plurality of stacked substrates disposed within the processing chamber as a stack so that the first and second layers are deposited on opposite sides of the stack. Deposition of the first layer and deposition of the second layer are performed simultaneously.