The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2009
Filed:
Feb. 13, 2007
Chun-hung Lin, Taoyuan County, TW;
Shy-jay Lin, Hsin-Chu, TW;
Heng-hsin Liu, Yonghe, TW;
Chien-hsun Lin, Hsin-Chu, TW;
Jui-chung Peng, Hsin-Chu, TW;
Yao-wen Guo, Chaozhou Town, TW;
Chun-Hung Lin, Taoyuan County, TW;
Shy-Jay Lin, Hsin-Chu, TW;
Heng-Hsin Liu, Yonghe, TW;
Chien-Hsun Lin, Hsin-Chu, TW;
Jui-Chung Peng, Hsin-Chu, TW;
Yao-Wen Guo, Chaozhou Town, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method for improving critical dimension of a substrate is provided. Manufacturing data of a plurality of critical dimension deviations corresponding to a plurality of areas on the substrate is collected. A plurality of sensitivity data corresponding to the plurality of areas is also collected. A plurality of exposure dosage offsets corresponding to the plurality of areas are calculated based on the plurality of critical dimension deviations and the plurality of sensitivity data.