The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2009

Filed:

Sep. 21, 2006
Applicants:

Jun-ing Kil, Yongin-si, KR;

Sok-ho Yi, Yongin-si, KR;

Kyong-hee Kim, Gwangju-si, KR;

Hee Seo, Yongin-si, KR;

Bon-wang Koo, Yongin-si, KR;

Min-young Kim, Incheon, KR;

Inventors:

Jun-Ing Kil, Yongin-si, KR;

Sok-Ho Yi, Yongin-si, KR;

Kyong-Hee Kim, Gwangju-si, KR;

Hee Seo, Yongin-si, KR;

Bon-Wang Koo, Yongin-si, KR;

Min-Young Kim, Incheon, KR;

Assignee:

Ram Technology Co., Ltd., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G03F 7/42 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a method of forming a pattern using a composition for removing photoresist, a layer is formed on a substrate, and then a photoresist pattern is formed on the layer. A portion of the layer exposed by the photoresist pattern is etched using the photoresist pattern as an etching mask to form the pattern on the substrate. Then, the photoresist pattern is removed using the composition including hydroxylamine, an alkanolamine-based compound, a morpholine-based compound, a polar solvent, a corrosion preventing agent, and water. The composition may effectively remove a photoresist pattern and etched residues without damaging the substrate and/or the pattern including metal, nitride, oxide and/or metal nitride.


Find Patent Forward Citations

Loading…