The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2009
Filed:
Apr. 26, 2006
Kevin K. Chan, Staten Island, NY (US);
Kathryn Wilder Guarini, Yorktown Heights, NY (US);
Erin C. Jones, Corvallis, OR (US);
Antonio F. Saavedra, Jr., Gainesville, FL (US);
Leathen Shi, Yorktown Heights, NY (US);
Dinkar V. Singh, White Plains, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Kathryn Wilder Guarini, Yorktown Heights, NY (US);
Erin C. Jones, Corvallis, OR (US);
Antonio F. Saavedra, Jr., Gainesville, FL (US);
Leathen Shi, Yorktown Heights, NY (US);
Dinkar V. Singh, White Plains, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Described is a wet chemical surface treatment involving NHOH that enables extremely strong direct bonding of two wafer such as semiconductors (e.g., Si) to insulators (e.g., SiO) at low temperatures (less than or equal to 400° C.). Surface energies as high as ˜4835±675 mJ/mof the bonded interface have been achieved using some of these surface treatments. This value is comparable to the values reported for significantly higher processing temperatures (less than 1000° C.). Void free bonding interfaces with excellent yield and surface energies of ˜2500 mJ/mhave also be achieved herein.