The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2009

Filed:

Sep. 19, 2005
Applicants:

Chih-chao Yang, Poughkeepsie, NY (US);

Kaushik Chanda, Fishkill, NY (US);

Lawrence A. Clevenger, LaGrangeville, NY (US);

Yun-yu Wang, Poughquag, NY (US);

Daewon Yang, Hopewell Junction, NY (US);

Inventors:

Chih-Chao Yang, Poughkeepsie, NY (US);

Kaushik Chanda, Fishkill, NY (US);

Lawrence A. Clevenger, LaGrangeville, NY (US);

Yun-Yu Wang, Poughquag, NY (US);

Daewon Yang, Hopewell Junction, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

An interconnect structure and method of making the same are provided. The interconnect structure includes a dielectric layer having a patterned opening, a metal feature disposed in the patterned opening, and a dielectric cap overlying the metal feature. The dielectric cap has an internal tensile stress, the stress helping to avoid electromigration from occurring in a direction away from the metal line, especially when the metal line has tensile stress.


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