The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2009
Filed:
Dec. 08, 2004
Akiko Suzuki, Akishima, JP;
Akinobu Sato, Soka, JP;
Emmanuel Bourelle, Tachikawa, JP;
Jiro Matsuo, Kyoto, JP;
Toshio Seki, Kyoto, JP;
Takaaki Aoki, Kyoto, JP;
Akiko Suzuki, Akishima, JP;
Akinobu Sato, Soka, JP;
Emmanuel Bourelle, Tachikawa, JP;
Jiro Matsuo, Kyoto, JP;
Toshio Seki, Kyoto, JP;
Takaaki Aoki, Kyoto, JP;
Japan Aviation Electronics Industry Limited, Tokyo, JP;
Abstract
In a dry etching method in which clusters formed by agglomeration of atoms or molecules are ionized and accelerated as a cluster ion beam for irradiation of an object surface to etch away therefrom its constituent atoms, the clusters are mixed clustersformed by agglomeration of two or more kinds of atoms or molecules, and the mixed clusterscontain atomsof at least one of argon, neon, xenon and krypton, and a componentthat is deposited on the object surface to form a thin film by reaction therewith. With this method, it is possible to provide an extremely reduced sidewall surface roughness and high vertical machining accuracy.