The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Nov. 30, 2005
John D. Larson, Iii, Palo Alto, CA (US);
John Choy, Westminster, CO (US);
Donald E. Lee, Fort Collins, CO (US);
Kevin J. Grannen, Thornton, CO (US);
Hongjun Feng, Windsor, CO (US);
Carrie A. Rogers, Fort Collins, CO (US);
Urupattur C. Sridharan, San Jose, CA (US);
John D. Larson, III, Palo Alto, CA (US);
John Choy, Westminster, CO (US);
Donald E. Lee, Fort Collins, CO (US);
Kevin J. Grannen, Thornton, CO (US);
Hongjun Feng, Windsor, CO (US);
Carrie A. Rogers, Fort Collins, CO (US);
Urupattur C. Sridharan, San Jose, CA (US);
Avago Technologies General IP (Singapore) Pte. Ltd., Singapore, SG;
Abstract
The temperature-compensated film bulk acoustic resonator (FBAR) device comprises an FBAR stack that comprises an FBAR characterized by a resonant frequency having a temperature coefficient and a temperature-compensating layer comprising doped silicon dioxide. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element has a temperature coefficient on which the temperature coefficient of the resonant frequency of the FBAR depends at least in part.