The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Sep. 11, 2006
Eric Frayssinet, Mougins, FR;
Bernard Beaumont, Le Tignet, FR;
Jean-pierre Faurie, Valbonne, FR;
Pierre Gibart, Charcarncuf Grasse, FR;
Eric Frayssinet, Mougins, FR;
Bernard Beaumont, Le Tignet, FR;
Jean-Pierre Faurie, Valbonne, FR;
Pierre Gibart, Charcarncuf Grasse, FR;
Lumilog, Vallauris, FR;
Abstract
A method of manufacturing a low defect density GaN material comprising at least two step of growing epitaxial layers of GaN with differences in growing conditions, (a.) a first step of growing an epitaxial layer GaN on an epitaxially compentent layer under first growing conditions selected to induce island features formation, followed by (b.) a second step of growing an epitaxial layer of GaN under second growing conditions selected to enhance lateral growth until coalescence.