The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2009
Filed:
Apr. 18, 2007
Christoph Schwan, Gebhardshain, DE;
Joe Bloomquist, Austin, TX (US);
Kai Frohberg, Niederau, DE;
Manfred Horstmann, Duerrroehrsdorf-Dittersbach, DE;
Christoph Schwan, Gebhardshain, DE;
Joe Bloomquist, Austin, TX (US);
Kai Frohberg, Niederau, DE;
Manfred Horstmann, Duerrroehrsdorf-Dittersbach, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
A method of forming a field effect transistor comprises providing a substrate comprising, at least on a surface thereof, a first semiconductor material. A recess is formed in the substrate. The recess is filled with a second semiconductor material. The second semiconductor material has a different lattice constant than the first semiconductor material. A gate electrode is formed over the recess filled with the second semiconductor material.