The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Jun. 28, 2005
Won Gi Min, Chandler, AZ (US);
Robert W. Baird, Gilbert, AZ (US);
Jiang-kai Zuo, Chandler, AZ (US);
Gordon P. Lee, Gilbert, AZ (US);
Won Gi Min, Chandler, AZ (US);
Robert W. Baird, Gilbert, AZ (US);
Jiang-Kai Zuo, Chandler, AZ (US);
Gordon P. Lee, Gilbert, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
An antifuse element () and method of fabricating the antifuse element, including a substrate material () having an active area () formed in an upper surface, a gate electrode () having at least a portion positioned above the active area (), and a gate oxide layer () disposed between the gate electrode () and the active area (). The gate oxide layer () including the fabrication of one of a gate oxide dip () or a gate oxide undercut (). During operation a voltage applied between the gate electrode () and the active area () creates a current path through the gate oxide layer () and a rupture of the gate oxide layer () in a rupture region (). The rupture region () defined by the oxide structure and the gate oxide dip () or the gate oxide undercut ().